Ginger G. Turner, Ph.D., P.E., CFEI

Dr. Turner’s main area of expertise is reliability and failure of electronic materials and devices. At Exponent, Dr. Turner performs failure analysis of lithium ion battery packs, electrical appliances, portable electronic devices, DC power supplies, printed circuit boards, and power semiconductor devices. Dr. Turner has also performed investigations involving residential electrical wiring, low voltage switchgear, utility power distribution systems, static electricity hazards, fluorescent lighting, arc flash explosions, counterfeit integrated circuits, portable generators, vehicle electronics, solenoids, and building fires. During these investigations, Dr. Turner has made use of relevant standards and regulations from organizations including UL, IEEE, NFPA, OSHA, IEC, and ANSI. Dr. Turner performs on site inspections, custom tailored laboratory testing, background literature research, and has provided testimony as an expert in product liability matters.

Prior to joining Exponent, Dr. Turner studied electrical engineering with a focus in semiconductor device design. She has experience with several processes and equipment in the microelectronics and nanotechnology field, including 2-D device simulation, lithography, metal deposition via sputtering and evaporation systems, reactive ion etching, thermal oxidation, annealing, and probe station electrical characterization. Dr. Turner has 6 years of experience in the field of silicon carbide power electronic devices and has worked in a clean-room environment. She also has experience in related fields such as compound semiconductor characterization, fiber optics, scanning electron microscopy, circuit design and layout, VLSI, and computational algorithms.

Dr. Turner also has a variety of teaching experience, including graduate courses, undergraduate courses, a college test prep (GRE) course, and middle school math and science. Most notably Dr. Turner developed a five week course module on Power Electronic Devices that has since been integrated into graduate coursework in the Microelectronics and Semiconductors specialization at Purdue University.

D’Andrade B, Turner G, Kattamis A, Saleh M. Reliability of switches that generate current in the grounding conductor. IEEE: Reliability Society 2011 Annual Technical Report, 2011.

Turner GG, Stepan J, Mikolajczak CJ. Safety considerations when designing portable electronics with electric double-layer capacitors (supercapacitors). Proceedings, 2011 IEEE Symposium on Product Compliance Engineering, Product Safety Engineering Society, October 2011.

Tamaki T, Walden GG, Sui Y, Cooper JA. Optimization of on-state and switching performances for 15–20-kV 4H-SiC IGBTs. IEEE Transactions on Electron Devices 2008; 55(8):1920–1927.

Tamaki T, Walden GG, Sui Y, Cooper JA. Numerical study of the turnoff behavior of high-voltage 4H-SiC IGBTs. IEEE Transactions on Electron Devices 2008; 55(8):1928–1933.

Presentations

Turner GG. Safety considerations when designing portable electronics with electric double-layer capacitors (supercapacitors). Presentation to 20011 IEEE Symposium on Product Compliance Engineering, October 20011.

Walden GG, Cooper JA. On-state characteristics of SiC Thyristors for the 8-20 kV regime. Device Research Conference, University Park, PA, June 22–24, 2009.

Walden GG, McNutt TR, Sherwin M, Van Campen S, Singh R, Howell R. Comparison of 10 kV 4H-SiC power MOSFETs and IGBTs for high frequency power conversion. International Conference on Silicon Carbide and Related Materials, Otsu, Japan, October 14–19, 2007.

Tamaki T, Walden GG, Sui Y, Cooper JA. On-state and switching performance of high-voltage 4H-SiC DMOSFETs and IGBTs. International Conference on Silicon Carbide and Related Materials, Otsu, Japan, October 14–19, 2007.

Sui Y, Walden GG, Tamaki T, Cooper JA. Design, simulation and characterization of high-voltage SiC p-IGBTs. International Conference on Silicon Carbide and Related Materials, Otsu, Japan, October 14–19, 2007.

Sui Y, Wang X, Walden GG, Cooper JA. Device options and design considerations for high-voltage (10-20 kV) SiC power switching devices. International Conference on Silicon Carbide and Related Materials, Pittsburgh, PA, September 18–23, 2005.

Cooper JA, Sui Y, Wang X, Walden GG. Device options for high-voltage SiC power switching devices. Invited, IEEE Device Research Conference, Santa Barbara, CA, June 20–22, 2005.