Ginger G. Walden, Ph.D.

Dr. Walden's areas of expertise include design, modeling, fabrication, and characterization of semiconductor devices. She has experience with several processes and equipment in the microelectronics and nanotechnology field including 2-D device simulation, lithography, metal deposition via sputtering and evaporation systems, reactive ion etching, thermal oxidation, annealing, and probe station electrical characterization. Since joining Exponent, Dr. Walden has also worked on a variety of case investigations including lithium ion battery packs, utility power distribution systems, and static electricity hazards that have augmented her areas of expertise.

During her studies at Purdue University, Dr. Walden gained 6 years of experience in the field of silicon carbide power electronic devices. Dr. Walden’s research involved working in a clean-room environment and the electrical characterization lab at the Brick Nanotechnology Center. She also has experience in related fields such as compound semiconductor characterization, fiber optics, scanning electron microscopy, circuit design and layout, VLSI, and computational algorithms.

Dr. Walden also has a variety of teaching experience at several levels. As a part of the GAANN fellowship program, Dr. Walden developed a five week course module on Power Electronic Devices that has since been integrated into graduate coursework in the Microelectronics and Semiconductors specialization at Purdue University. Dr. Walden has also tutored at the college, high school, and elementary school levels in areas of math, electrical engineering, and computer science. As a graduate student, Dr. Walden assisted in the teaching of the undergraduate Solid State Electronics course for 5 semesters at Purdue University. As an undergraduate student, she worked as a laboratory and teaching assistant for several courses including Introduction to Electrical Engineering I and II, Digital Logic Design, Intermediate Computer Programming, and Electronic Circuits.

Tamaki T, Walden GG, Sui Y, Cooper JA. Optimization of on-state and switching performances for 15–20-kV 4H-SiC IGBTs. Trans Electron Dev 2008; 55(8):1920–1927.

Tamaki T, Walden GG, Sui Y, Cooper JA. Numerical study of the turnoff behavior of high-voltage 4H-SiC IGBTs. Trans Electron Dev 2008; 55(8):1928–1933.

Presentations

Walden GG, Cooper JA. On-state characteristics of SiC Thyristors for the 8-20 kV regime. Device Research Conference, University Park, PA, June 22–24, 2009.

Walden GG, McNutt TR, Sherwin M, Van Campen S, Singh R, Howell R. Comparison of 10 kV 4H-SiC power MOSFETs and IGBTs for high frequency power conversion. International Conference on Silicon Carbide and Related Materials, Otsu, Japan, October 14–19, 2007.

Tamaki T, Walden GG, Sui Y, Cooper JA. On-state and switching performance of high-voltage 4H-SiC DMOSFETs and IGBTs. International Conference on Silicon Carbide and Related Materials, Otsu, Japan, October 14–19, 2007.

Sui Y, Walden GG, Tamaki T, Cooper JA. Design, simulation and characterization of high-voltage SiC p-IGBTs. International Conference on Silicon Carbide and Related Materials, Otsu, Japan, October 14–19, 2007.

Sui Y, Wang X, Walden GG, Cooper JA. Device options and design considerations for high-voltage (10-20 kV) SiC power switching devices. International Conference on Silicon Carbide and Related Materials, Pittsburgh, PA, September 18–23, 2005.

Cooper JA, Sui Y, Wang X, Walden GG. Device options for high-voltage SiC power switching devices. Invited, IEEE Device Research Conference, Santa Barbara, CA, June 20–22, 2005.