PROJECT PROFILE - Polysilicon and Silicon Nitride Residual
Stress
Quantify your thin film material properties across wafer
surfaces.
Problem
A fabrication facility needed to determine how polysilicon
and silicon nitride residual stresses varied from batch to
batch and across a given wafer.
Exponents Solution
Exponent employed a CMOS-compatible technique to fabricate
polysilicon or silicon nitride MEMS micromembranes from thin
films deposited onto silicon wafers. We then mapped the in-plane
residual stress and biaxial modulus across the wafer surfaces.
Outcome
Exponent produced a rapid, repeatable, CMOS-compatible technique
to evaluate thin film mechanical properties.
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