Edward Fei
Edward Fei, Ph.D.
Senior Associate
Electrical Engineering & Computer Science
  • Menlo Park

Dr. Fei is an electrical engineer whose expertise covers the areas of optoelectronic devices, optical telecommunication systems and devices, semiconductor material growth, and nano-fabrication tools and processes. At Exponent, his work has focused on optical characterization of thin films and materials, radiation safety analysis of LEDs and lasers, flex cable failure, PCB failure, and electrical microprobing.

At Stanford, Dr. Fei focused on germanium quantum well LEDs, modulators and detectors for on-chip optical interconnects. His dissertation investigated the design, growth, fabrication and characterization of a novel vertically coupled waveguide device and the efficacy of an integrated optical interconnect system composed of those devices. Dr. Fei also has experience with the fabrication and characterization of electrochemical biosensors and microfluidics through his work on single-molecule biosensors with Intel.

CREDENTIALS & PROFESSIONAL HONORS

  • Ph.D., Electrical Engineering, Stanford University, 2015
  • M.S., Electrical Engineering, Stanford University, 2015
  • B.S., Physics, Stanford University, 2007, with Honors and Distinction
  • National Science Foundation Graduate Research Fellowship Program (GRFP), Fellow, 2008–2012

    Stanford Graduate Fellowship in Science and Engineering, 2008–2011

    Pan Wen Yuan Foundation Scholarship, 2008

    Electronic Materials Symposium’s Undergraduate Award, 2007

LANGUAGES

  • Mandarin

Publications

Fei ET, Huo Y, Shambat G, Chen X, Liu X, Claussen SA, Edwards EH, Kamins TI, Miller DAB, Vuckovic J, Harris JS. Light emission in Ge quantum wells. Conference on Lasers and Electro-Optics 2012.

Fei ET, Edwards EH, Huo Y, Chen X, Claussen SA, Liu X, Rong Y, Kamins TI, Miller DAB, Harris JS. Low power SiGe electroabsorption modulators for optical interconnects. Integrated Photonics Research, Silicon and Nano Photonics 2012.

Claussen SA, Balram KC, Fei ET, Kamins TI, Harris JS, Miller DAB. Selective-area growth of Ge and Ge/SiGe quantum wells in 3 μm silicon-on-insulator waveguides. Conference on Lasers and Electro-Optics 2012.

Schaevitz RK, Edwards EH, Roth JE, Fei E, Rong Y, Wahl P, Kamins TI, Harris JS, Miller DAB. Simple electroabsorption calculator for designing 1310nm and 1550nm modulators in germanium quantum wells. IEEE Journal of Quantum Electronics 2012 Feb.

Edwards EH, Lever L, Fei ET, Kamins TI, Ikonic Z, Harris JS, Kelsall RW, Miller DAB. Low-voltage broad-band electroabsorption from thin Ge/SiGe quantum wells epitaxially grown on silicon. Optics Express 2013; 21:867–876.

Prior Experience

Research Associate, Intel Corporation, 2014

Scanning Probe Microscopy Lab Manager, Stanford Nanocharacterization Laboratory, 2008–2014

Instructor, Stanford University, 2012

Instructor, Stanford Education Program for Gifted Youth (EPGY), 2010–2011

Data Analyst, Gravity Probe-B, 2004–2007

CREDENTIALS & PROFESSIONAL HONORS

  • Ph.D., Electrical Engineering, Stanford University, 2015
  • M.S., Electrical Engineering, Stanford University, 2015
  • B.S., Physics, Stanford University, 2007, with Honors and Distinction
  • National Science Foundation Graduate Research Fellowship Program (GRFP), Fellow, 2008–2012

    Stanford Graduate Fellowship in Science and Engineering, 2008–2011

    Pan Wen Yuan Foundation Scholarship, 2008

    Electronic Materials Symposium’s Undergraduate Award, 2007

LANGUAGES

  • Mandarin