Mr. Yang has extensive experience in failure investigations related to electrics systems and components, batteries, semiconductor fabrication, and device physics. At Exponent, he specializes in electronics system failure investigations, particularly thermal investigations and battery failures. He has also investigated failures of electronics components, portable electronic device, and accessories such as cables and power supplies. He is experienced with general failure analysis techniques from x-ray imaging, scanning electron microscopy, micro probing, electronics bench testing, and particularly x-ray computed tomography (CT) scans. He has conducted tests to recreate several large scale failures including power supplies and batteries; electrical appliance safety testing including conditioning units and gas water heaters; and electronics system stress testing such as ESD.
Mr. Yang holds a M.S. degree in Applied and Engineering Physics, specializing in investigating the electron transport properties of III-IV compound semiconductor nanowire growth on highly doped silicon wafer and the circuits that interfaced with this system. He optimized a conductive atomic force microscopy (C-AFM) system, a surface probing technique, to characterize electrical properties of nano-devices by simultaneously creating nano-scale electrical contact while probe scanning the surface. Through his work of prototype device characterization, he gained extensive experience in ohmic contacts, electrical testing, semiconductor energy band structure simulations, and clean room fabrication/process development. His research also involved in nanowire growth techniques, reactive ion etching (RIE), photolithography, wafer bonding as well as metrology including surface profiling techniques.
CREDENTIALS & PROFESSIONAL HONORS
- M.S., Applied and Engineering Physics, Technical University of Munich, Germany, 2012
- B.S., Electrical Science and Engineering, East China Normal University, Shanghai, 2010
Yang T, Hertenberger S, Morkötter S, Abstreiter G, Koblmueller G. Size, composition and doping effects on In(Ga)As nanowire/Si tunnel diodes probed by conductive atomic force microscopy. Applied Physics Letters 2012; 101:233102.
Yang T, et al. Esaki tunneling performance of In(Ga)As-nanowire/Si heterojunction tunnel diodes. 33rd International Conference on Solution Chemistry, ICSC 2013.