Dr. Woo has a broad range of experience in the areas of semiconductor devices, nanotechnology, and microfabrication. His main expertise is in the field of fabrication, modeling, simulation, and characterization of novel electronics devices.
At Stanford University, Dr. Woo’s research focused on quantum tunneling based transistors for low-power logic and flash memory applications. Through this work, Dr. Woo gained extensive hands-on experience with semiconductor fabrication and characterization techniques including epitaxial growth, photolithography, rapid thermal processing, dry etching, TEM and AFM microscopy, and ellipsometry. His research also involved extensive use of device simulation and CAD tools, as well as electrical test equipment for device characterization including I-V, C-V, and reliability measurements.
At Duke University, Dr. Woo integrated microfluidic and electric circuitry onto a single PCB to form an electrically switchable optical waveguide for fiber optic communications. He also helped to develop a focused ultrasound phased-array for use in cancer therapy.
Dr. Woo has previously conducted research into emerging nanotech devices. At the Air Force Research Lab, he used a combination of chemical and electrical modeling to study the properties of molecular electronic devices and received a Special Act or Service Award for his work. He also worked at the Army Research Lab evaluating the properties of carbon nanotubes through cryogenic electrical measurements, conductive AFM, and STM imaging.
In addition, Dr. Woo has experience developing test automation software using Labview and Matlab, and is familiar with C, C++, and Java. Dr. Woo also holds FAA commercial pilot, flight instructor, and ground instructor certificates, and actively volunteers as a search and rescue pilot.
Woo R, Koh H-YS, Onal C, Griffin PB, Plummer JD. Band-to-Band Tunneling (BTBT) transistor scaling: On-current and switching speed concerns. SRC TECHCON, 2008.
Woo R, Koh H-YS, Onal C, Griffin PB, Plummer JD. BTBT transistor scaling: Can they be competitive with MOSFETs? Device Research Conference Technical Digest, 2008.
Feng J, Woo R, Chen S, Liu Y, Griffin PB, Plummer JD. P-channel germanium FinFET based on rapid melt growth. IEEE Electron Device Lett 2007; 28(7).
Lastella S, Mallick G, Woo R, Karna SP, Rider DA, Manners I, Jung YJ, Ryu CY, Ajayan PM. Parallel arrays of individually addressable single-walled carbon nanotube field-effect transistors. J Appl Phys 2006; 99(2).
Gopalakrishnan K, Woo R, Jungemann C, Griffin PB, Plummer JD. Impact Ionization MOS (IMOS). II. Experimental results. IEEE Trans Electron Dev 2005; 52(1).
Gopalakrishnan K, Woo R, Shenoy R, Jono Y, Griffin PB, Plummer JD. Novel very high injection efficiency structures based on the BBHE mechanism for ultra low power FLASH memories. IEEE Electron Dev Lett 2005; 26(3).
Woo R, Pati R, Karna SP. Time varying response of molecular electron devices: A fundamental requirement for organic nanoelectronics. Appl Phys Lett 2002; 81(10).
Fair RB, Pollack MG, Woo R, Pamula VK, Hong R, Zhang T, Venkatraman J. A micro-watt metalinsulator- solution-transport (MIST) device for scalable digital bio-microfluidic systems. IEEE Electron Device Meeting Technical Digest, 2001.