Dr. Hu’s area of expertise includes semiconductor physics and device characterization. Her doctoral dissertation investigated the growth and properties of a two-dimensional carbon material and its applications in microelectronics. She has extensive experience with design of experiments, device fabrication, surface characterization, and electrical and magnetotransport measurements.
Before joining Exponent, Dr. Hu was a senior scientist at Halliburton where she worked on developing gamma ray sensing instruments for oil and gas exploration and well integrity intervention using scintillation crystal and photomultiplier tube. She is also the author of more than 10 patent applications with the USPTO.
As a graduate research assistant at the Georgia Institute of Technology, Dr. Hu performed fundamental research in graphene physics and demonstrated the quantum phenomenon in graphene based electronics. She worked on understanding the growth mechanism and improved the growth process to achieve high quality graphene thin film obtained through thermal sublimation of silicon carbide in an induction furnace. She mastered laboratory skills in surface analysis (AFM, SEM, XPS, Raman, Ellipsometer, LEED), nanodevice fabrication (E-beam lithography, RIE, ICP, E-BEAM evaporation, carbon coater, ALD), and electrical and magnetotransport measurements (Lock-in amplifier, cryogenic measurements, Hall effect measurements, and resistivity measurements).
CREDENTIALS & PROFESSIONAL HONORS
- Ph.D., Physics, Georgia Institute of Technology (Georgia Tech), 2013
- B.S., Physics, Tsinghua University, 2007
- Mandarin Chinese
Kunc J, Hu Y, Palmer J, Guo Z, Hankinson J, Gamal S, Berger C, de Heer W, Planar edge Schottky barrier-tunneling transistors using epitaxial graphene/SiC junctions, Nano Letters 2014, 14, 5170.
Palmer J, Kunc J, Hu Y, Hankinson J, Guo Z, Berger C, de Heer W, Controlled epitaxial graphene growth within removable amorphous carbon corrals, Applied Physics Letters 2014, 105, 023106.
Sherpa S, Kunc J, Hu Y, Levitin G, de Heer W, Berger C, Hess D, 2014, Local work function measurements of plasma-fluorinated epitaxial graphene, Applied Physics Letters 104, 081607.
Dong R, Guo Z, Palmer J, Hu Y, Ruan M, Hankinson J, Kunc J, Bhattacharya S, Berger C, deHeer W, Wafer bonding solution to epitaxial graphene–silicon integration, Journal of Physics D: Applied Physics 2014, 47, 094001.
Kunc J, Hu Y, Palmer J, Berger C, de Heer W, A method to extract pure Raman spectrum of epitaxial graphene on SiC, Applied Physics Letter 2013, 103, 201911.
Guo Z, Dong R, Chakraborty P, Lourenco N, Palmer J, Hu Y, Ruan M, Hankinson J, Kunc J, Cressler J, Berger C, de Heer W, Record Maximum Oscillation Frequency in C-face Epitaxial Graphene transistors, Nano Letters 2013, 13, 942.
Ruan M, Hu Y, Guo Z, Dong R, Palmer J, Hankinson J, Berger C, de Heer W, Epitaxial graphene on silicon carbide: introduction to structured graphene, MRS Bulletin 2012, 37, 1146.
Hu Y, Ruan M, Guo Z, Dong R, Palmer J, Hankinson J, Berger C, de Heer W, Structured epitaxial graphene growth, Journal of Physics D: Applied Physics 2012, 45, 154010.
Kim S, Zhou S, Hu Y, Acik M, Chabal Y, Berger C, de Heer W, Bongiorno A, Riedo E, Room Temperature Metastability of Multilayer Graphene Oxide Films, Nature Materials 2012, 11, 544.
Wu X, Hu Y, Ruan M, Madiomanana N, Berger C, de Heer W, Thermoelectric effect in high mobility single layer epitaxial graphene, Applied Physics Letters 2011, 99, 133102.
de Heer W, Berger C, Ruan M, Sprinkle M, Li X, Hu Y, Zhang B, Hankinson J, Conrad E, Large area and structured epitaxial graphene produced by confinement controlled sublimation of silicon carbide, Proceeding of National Academy of Sciences 2011, 108 (41) 16900.
Song YJ, Otte A, Kuk Y, Hu Y, Torrance D, First P, de Heer W, Min H, Adam S, Stiles M, MacDonald A, Stroscio J, High-resolution tunnelling spectroscopy of a graphene quartet, Nature 2010, 467, 185.
Wei Z, Wang D, Kim S, Kim SY, Hu Y, Yakes M, Laracuente R, Dai Z, Marder S, Berger C, King W, de Heer W, Sheehan P, Riedo E, Nanoscale tunable reduction of graphene oxide for graphene electronics, Science 2010, 328, 1373.
Sprinkle M, Ruan M, Hu Y, Rubio-Roy M, Hankinson J, Wu X, Berger C, de Heer W, Scalable Templated growth of graphene nanoribbons on SiC, Nature Nanotechnology 2010, 5, 727.
de Heer W, Berger C, Wu X, Sprinkle M, Hu Y, Ruan M, Stroscio J, First P, Haddon R, Piot B, Faugeras C, Potemski M, Moon JS, Epitaxial Graphene Electronic Structure And Transport, Journal of Physics D: Applied Physics 2010, 43, 374007.
Rubio-Roy M, Zaman F, Hu Y, Berger C, Moseley M, Meindl J, de Heer W, Structured epitaxial graphene growth on SiC by selective graphitization using a patterned AIN cap, Applied Physics Letters 2010, 96, 082112.
Wu X, Hu Y, Ruan M, Madiomanana N, Hankinson J, Sprinkle M, Berger C, de Heer W, Half integer quantum Hall effect in high mobility single layer epitaxial graphene, Applied Physics Letters 2009, 95, 223108.
Li X, Wu X, Sprinkle M, Ming F, Ruan M, Hu Y, Berger C, de Heer W, Top and side gated epitaxial graphene field effect transistors, Physica Status Solidi (a) 2009, 207, 286.
Sprinkle M, Siegel D, Hu Y, Hicks J, Soukiassian P, Tejeda A, Taleb-Ibrahimi A, Le F`evre P, Bertran F, Berger C, de Heer W, Lanzara A, Conrad E, First direct observation of a nearly ideal graphene band structure, Physical Review Letters 2009, 103, 226803.
Hu Y, Guo W, Behind Casing Inspection Using Active Gamma-Gamma Technique, Offshore Technology Conference Asia, Kuala Lumpur, Malaysia, 2016.
Hu Y, Guo W, Behind-Casing Cement Void Volumetric Evaluation, talk, SPE Thermal Well Integrity and Design Symposium, Banff, Alberta, Canada, 2015.
Hu Y, Guo W, A Focused-Sensitivity Cement Evaluation Method Using X-Ray/Gamma Ray Spectra, 13th International Conference on Inorganic Scintillators and Their Applications, Berkeley, CA, 2015.
Hu Y, Guo Z, Ruan M, Hankinson J, Palmer J, Zhang B, Dong R, Kunc J, Berger C, deheer W, High Mobility Single Layer Epitaxial Graphene on 4H-SiC, American Physical Society March Meeting, Boston, MA, 2012.
Hu Y, Guo Z, Dong R, Berger C, deheer W, Device Fabrication Progress on Epitaxial Graphene on SiC, American Physical Society March Meeting, Dallas, TX, 2011.
Hu Y, Berger C, de Heer W, Traditional and Novel Dielectric Materials for Epitaxial Graphene Electronics Applications, American Physical Society March Meeting, Portland, OR, 2010.
Hu Y, Wu X, Sprinkle M; Madiomanana N, Ruan M; Berger C; de Heer W, Characterization and morphology of Epitaxial Graphene Oxide, American Physical Society March Meeting, Pittsburg, PA 2009.
US20170261639, Downhole photon radiation detection using scintillating fibers, (Hu Y, Guo W).
US20170145821, Behind pipe evaluation using a nuclear density tool, (Hu Y, Guo W).
WO2016153523, Cement evaluation with x-ray tomography, (Hu Y, Guo W).
WO2016076920, Photon collimation apparatus, methods, and systems, (Hu Y, Lee D, Guo W).
Senior Scientist, Halliburton, 2013-2017
Intern, Schlumberger, May-August 2012
Graduate Research Assistant, Epitaxial Graphene Lab, Georgia Institute of Technology, 2008-2013
American Physical Society – APS
Society of Automotive Engineers – SAE
Institute of Electrical and Electronics Engineers – IEEE
Applied Physics Letters
Semiconductor Science and Technology
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