Meredith Nevius
Meredith S. Nevius, Ph.D.
Senior Scientist
Materials & Corrosion Engineering
Menlo Park

Dr. Nevius’ general expertise includes failure and materials analysis of a wide variety of products, including consumer electronics and medical devices. Dr. Nevius has five years research experience in processing, fabrication, and characterization of thin films and electronic materials. She also has extensive experience in surface and bulk characterization techniques, including atomic force microscopy (AFM), x-ray photoemission spectroscopy (XPS), angle-resolved photoemission spectroscopy (ARPES), low-energy electron diffraction (LEED), low-energy electron microscopy (LEEM), x-ray photoemission electron microscopy (XPEEM), scanning electron microscopy (SEM), and Raman spectroscopy. Her thin film fabrication and processing capabilities include RF-induction sublimation, chemical vapor deposition, plasma etching, and electron beam lithography.

During her doctoral work, Dr. Nevius focused on the growth and characterization of two-dimensional and nano-structured semiconducting and metallic materials for nano-device fabrication.

Since joining Exponent, Dr. Nevius has conducted failure analysis, fracture analysis, and processing investigations for clients in the consumer electronics and medical device fields.

CREDENTIALS & PROFESSIONAL HONORS

  • Ph.D., Physics, Georgia Institute of Technology (Georgia Tech), 2016
  • M.S., Physics, Georgia Institute of Technology (Georgia Tech), 2012
  • B.S., Physics, Georgia Institute of Technology (Georgia Tech), 2011

Publications

Nevius MS, Conrad M, Wang F, Celis A, Nair MN, Taleb-Ibrahimi A, Tejeda A, Conrad EH. Semiconducting graphene from highly ordered substrate interactions. Phys. Rev. Lett. 2015; 115:136802.

Nevius MS, Wang F, Mathieu C, Barrett N, Sala A, Mentes TO,̧ Locatelli A, Conrad EH. The bottom-up growth of edge specific graphene nano-ribbons. Nano Letters 2014; 14:6080−6086.

Wang F, Liu G, Rothwell S, Nevius MS, Mathieu C, Barrett N, Sala A, Mentes TO, Locatelli A, Cohen PI, Feldman LC, Conrad EH. Pattern induced ordering of semiconducting graphene ribbons grown from nitrogen-seeded SiC. Carbon 2015; 360-367.

Palacio I, Celis A, Nair MN, Gloter A, Zobelli A, Sicot M, Malterre D, Nevius MS, De Heer WA, Berger C, Conrad EH, Taleb-Ibrahimi A, Tejeda A. Atomic structure of epitaxial graphene sidewall nanoribbons: flat graphehe, miniribbons, and the confinement gap. Nano Letters 2014; 15:182-189.

Hicks J, Tejeda A, Taleb-Ibrahimi A, Nevius MS, Wang F, Shepperd K, Palmer J,Bertran F, Le Fèvre P, Kunc J, De Heer WA, Berger C, Conrad EH. A wide-bandgap metal-semiconductor-metal nanostructure made entirely from graphene. Nature Physics 2013; 9:49–54.

Wang F, Liu G, Rothwell S, Nevius M, Tejeda A, Taleb-Ibrahimi A, Feldman LC, Cohen PI, Conrad EH. Wide-gap semiconducting graphene from nitrogen-seeded SiC. Nano Lett. 2013; 13:4827-4832.

Wang F, Shepperd K, Hicks J, Nevius MS, Tinkey H, Tejeda A, Taleb-Ibrahimi A, Bertran F, Le Fevre P, Torrance DB, First PN, De Heer WA, Zakharov AA, Conrad EH. Silicon intercalation into the graphene-SiC interface. Physical Review B 2012; 85:165449.

Presentations


Nevius M, Wang F, Palacio I, Celis A, Tejeda A, Taleb-Ibrahimi A, de Heer W, Berger C, Conrad E. A structural and electronic comparison of armchair and zigzag epitaxial graphene sidewall nanoribbons. Presentation, APS March Meeting 2014, Denver, CO, 2014.

Nevius M, Hicks J, Tejeda A, Taleb-Ibrahimi A, Wang F, Conrad EH. A 1D wide band gap graphene metal-semiconductor-metal junction for devices. Presentation, APS March Meeting, Baltimore, MD, 2013.

CREDENTIALS & PROFESSIONAL HONORS

  • Ph.D., Physics, Georgia Institute of Technology (Georgia Tech), 2016
  • M.S., Physics, Georgia Institute of Technology (Georgia Tech), 2012
  • B.S., Physics, Georgia Institute of Technology (Georgia Tech), 2011