Jordan Occena
Jordan M. Occena
Associate
Materials & Corrosion Engineering
Menlo Park

Dr. Occena’s experience bridges materials science and electrical engineering, with a focus on materials-related issues in electronic devices and components. He has expertise in deposition, processing, and characterization of thin films and semiconductor materials, particularly for applications in integrated circuits, photovoltaics, and light emission.

Dr. Occena is experienced in a variety of approaches for investigating materials’ microstructure, composition, and electronic properties to identify failure modes and structure-property relationships, including scanning and transmission electron microscopy (SEM, TEM), focused ion beam (FIB) milling, x-ray diffraction (XRD), and reflection high-energy electron diffraction (RHEED), as well as current-voltage (I-V), capacitance-voltage (C-V), and Hall effect measurements. He also has experience with various cleanroom processing techniques and with the operation and design of ultra-high vacuum (UHV) systems.

Prior to joining Exponent, Dr. Occena’s graduate research focused on epitaxial growth and structural and electronic characterization of III-V semiconductor thin films. His thesis examined the use of surface structure to modify composition, microstructure, and doping in highly mismatched semiconductor alloys, as a route to engineering optical and electronic properties. He has also worked on characterization of semiconductor nanowires and amorphous metal alloys for transistors and synthesis and processing of metal-oxide nanostructures for solar cells.

While at the University of Michigan, Dr. Occena assisted in teaching laboratory and lecture courses covering topics including mechanical testing, polymer characterization, and x-ray analysis (XRD, XRF, EDS), as well as introductory materials science concepts for application across engineering disciplines. He also co-led a student team in the design of a residential-scale system for rainwater harvesting and greywater reuse.

CREDENTIALS & PROFESSIONAL HONORS

  • Ph.D., Materials Science and Engineering, University of Michigan, Ann Arbor, 2018
  • B.S., Engineering Physics, University of Tulsa, 2013
  • Awardee, Department of Energy Office of Science Graduate Student Research (SCGSR) Program, 2016

    Honorable Mention, National Science Foundation Graduate Research Fellowship Program, 2014

    Rackham Merit Fellow, University of Michigan, 2013

Publications

Occena J, Jen T, H Lu, Carter BA, Jimson TS, Norman AG, Goldman RS. Surfactant-induced chemical ordering of GaAsN:Bi. Applied Physics Letters 2018; 113(21): 211602.

Luengo-Kovac M, Huang S, Del Gaudio D, Occena J, Goldman RS, Raimondi RS, Sih V. Current-induced spin polarization in InGaAs and GaAs epilayers with varying doping densities. Physical Review B 2017; 96(19): 195206.

Occena* J, Jen* T, Rizzi EE, John TM, Horwath J, Wang YQ, Goldman RS. Bi-enhanced N incorporation in GaAsNBi alloys. Applied Physics Letters 2017; 110(24): 242102. (*equal contribution)

Field III RL, Occena J, Jen T, Del Gaudio D, Yarlagadda B, Kurdak C, Goldman RS. Influence of surface reconstruction on dopant incorporation and transport properties of GaAs(Bi) alloys. Applied Physics Letters 2016; 109(25): 252105.

Desai D, Occena J, Rockwell H. Hybrid systems: exploring decentralized water management at an urban residence. Michigan Journal of Sustainability 2015; 3.


Presentations

Occena J, Jen T, Hu J, Norman AG, Goldman RS. Influence of surface reconstruction on GaAsNBi alloy formation. Oral presentation, 8th International Workshop on Bismuth-Containing Semiconductors, Marburg, Germany, 2017.

Occena J, Jen T, Wang YQ, Goldman RS. Influence of bismuth on nitrogen incorporation in GaAsNBi alloys. Poster presentation, 7th International Workshop on Bismuth-Containing Semiconductors, Shanghai, China, 2016.

Occena J, Jen T, Wang YQ, Goldman RS. Bismuth-enhanced nitrogen incorporation in GaAsNBi alloys. Oral presentation, 58th Electronic Materials Conference, Newark, DE, 2016.

Occena J, Field III RL, Teran AS, Jen T, Kurdak C, Phillips JD, Goldman RS. Electrical characterization of GaAsN and GaAsBi single-quantum-well diodes. Oral presentation, American Physical Society March Meeting, San Antonio, TX, 2015.

Field III RL, Jen T, Occena J, Yarlagadda B, Kurdak C, Goldman RS. Amphoteric doping of GaAsBi alloys with silicon. Poster presentation, Gordon Research Conference on Defects in Semiconductors, Waltham, MA, 2014.

Prior Experience

DOE SCGSR Program Awardee, National Renewable Energy Laboratory, 2017

Graduate Student Instructor, University of Michigan, 2016

Research Intern, Forschungszentrum Juelich, Summer 2013

Research Intern, Stanford Nanofabrication Facility, Summer 2012

CREDENTIALS & PROFESSIONAL HONORS

  • Ph.D., Materials Science and Engineering, University of Michigan, Ann Arbor, 2018
  • B.S., Engineering Physics, University of Tulsa, 2013
  • Awardee, Department of Energy Office of Science Graduate Student Research (SCGSR) Program, 2016

    Honorable Mention, National Science Foundation Graduate Research Fellowship Program, 2014

    Rackham Merit Fellow, University of Michigan, 2013